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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1911A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1911A is a switching device which can be driven directly by a 2.5 V power source. The PA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
6
5
4
1.5
FEATURES
* Can be driven by a 2.5 V power source * Low on-state resistance RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 120 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 190 m MAX. (VGS = -2.5 V, ID = -1.0 A)
0 to 0.1
1 2 3
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type)
Note
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
PA1911ATE
Note Marking: TK
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
-20 12 2.5 10 0.2 2 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode Body Diode
Total Power Dissipation Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. Remark
PT2 Tch Tstg
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15044EJ1V0DS00 (1st edition) Date Published April 2001 NS CP(K) Printed in Japan
(c)
2001
PA1911A
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 10 A / s TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -4.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V, ID = -1.5 A VGS = -4.0 V RG = 10 -0.5 1 -1.0 5.4 82 86 122 370 110 40 130 230 470 380 2.3 1.0 1.0 0.84 14 1.4 115 120 190 MIN. TYP. MAX. -10 10 -1.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL PG. RG RG = 10 VDD
ID 90% 90% ID 0 10% td(on) ton tr td(off) toff 10% tf VGS
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA
10% VGS(on) 90%
VGS
Wave Form
RL VDD
0
PG.
50
VGS 0 = 1 s Duty Cycle 1%
ID
Wave Form
2
Data Sheet G15044EJ1V0DS
PA1911A
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA -100
100
dT - Derating Factor - %
80
ID - Drain Current - A
-10
(o DS
60
RV (@
n)L -4 = GS
im
d ite V) .5
ID(pulse)
1m s
ID(DC)
-1
ms 10 0m DC s
10
40
-0.1
20
0 0 30 60 90 120 TA - Ambient Temperature - C 150
-0.01 -0.1
Single Pulse Mounted on 2500mm2 x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board
-1.0 -10.0 VDS - Drain to Source Voltage - V
-100.0
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -10
VGS = -4.0V
FORWARD TRANSFER CHARACTERISTICS -100 -10
ID - Drain Current - A
VDS = -10 V
-8
ID - Drain Current - A
-1 -0.1 -0.01 -0.001 -0.0001
TA = +125C
-6 -4 -2
VGS = -4.5V
TA = +75C TA = +25C TA = -25C
VGS = -2.5V
0 0.0
-0.2 -0.4 -0.6 -0.8 VDS - Drain to Source Voltage - V
-1.0
-0.00001 0.0
-0.5
-1.0 -1.5 -2.0 -2.5 VGS - Gate to Sorce Voltage - V
-3.0
VGS(off) - Gate to Source Cut-off Voltage - V
| yfs | - Forward Transfer Admittance - S
-1.5
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VDS = -10 V ID = -1 mA
100.00
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VDS = -10 V TA = +25C
10.00
TA = -25C
-1.0
1.00
TA = +75C
0.10
TA = +125C
-0.5 -50
0 50 100 Tch - Channel Temperature - C
150
0.01 -0.01
-0.10
-1.00
-10.00
-100.00
ID - Drain Current - A
Data Sheet G15044EJ1V0DS
3
PA1911A
RDS(on) - Drain to Source On-state Resistance - m
300 250 200 150 100
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS = -2.5 V TA = +75C TA = +125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200
VGS = -4.0 V
150
TA = +125C TA = +75C
100
50
50 0 -0.01
TA = +25C TA = -25C
TA = -25C
TA = +25C
-0.10
-1.00
-10.00
-100.00
0 -0.01
-0.10
-1.00
-10.00
-100.00
ID - Drain Current - A
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200
VGS = -4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200
ID = -1.5 A
150
TA = +125C TA = +75C
150
VGS = -2.5 V
100
100
50
TA = -25C
TA = +25C
50
VGS = -4.5 V
VGS = -4.0 V
0 -0.01
0 -50 50 100 0 Tch - Channel Temperature - C 150
-0.10
-1.00
-10.00
-100.00
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200
ID = -1.5 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000
Ciss, Coss, Crss - Capacitance - pF
f = 1MHZ VGS = 0V
150
Ciss
100
100
Coss
50
Crss
0 0.0
-2.0 -4.0 -6.0 -8.0 -10.0 VGS - Gate to Source Voltage - V
-12.0
10 -0.1
-1.0 -10.0 VDS - Drain to Source Voltage - V
-150
4
Data Sheet G15044EJ1V0DS
PA1911A
SWITCHING CHARACTERISTICS 1000.00
td(on), tr, td(off). tf - Switching Time - ns
tf td(off) tr td(on)
SOURCE TO DRAIN FORWARD VOLTAGE 100.00
IF - Source to Drain Current - A
VGS = 0 V
10.00
100.00
1.00
0.10
10.00 -0.10
VDD = -10 V VGS = -4.0 V RG = 10
0.01
-1.00 ID - Drain Current - A
-10.00
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Body Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS -4
VGS - Gate to Source Voltage - V
ID = -2.5 A
-3
VDD = -16 V VDD = -10 V
-2
VDD = -6 V
-1
0 0 0.5 1 1.5 2 2.5 3 QG Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch - A) - Transient Thermal Resistance - C/W
Single Pulse
Without Board
100
10
Mounted on 2500mm2 x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board
1
0.1 0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15044EJ1V0DS
5
PA1911A
[MEMO]
6
Data Sheet G15044EJ1V0DS
PA1911A
[MEMO]
Data Sheet G15044EJ1V0DS
7
PA1911A
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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